HCl/HNO₃/H₂SO₄ 改性 g-C₃N₄ 的光催化性能研究

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關鍵詞： g-C3N4 ；酸性改性處理；光催化；熒光光譜；帶隙中圖分類號：0482.31 文獻標志碼：A 文章編號：2095-2945(2025)14-0088-04

Abstract:g-C3N4werepreparedbythermal polymerizationand treatedwithHCl/HNO/HSO4，whichwaspreparedbycheap urea asprecursor.Studies on photocatalytic performance of g -C3N4 modification by HCI/HNO/HSO ′4 and the obtained products were characterizedbyXRD,SEM,PLandothermethods，andthefactorsafectingitsphotocatalysiswereaalyzed.Theresultsshow that the photocatalytic performance of acid-modified g -C3N4is significantly improved duo to the change of fluorescence intensity andband gap,and the fect of nitric acid modification on the photocatalytic performance is the mostobvious.

Keywords: g-C3N4; acidification; photocatalysis; PL; optical band gap

g-C3N4 作為一種類石墨結構的有機半導體材料，具有良好的高溫穩(wěn)定性和化學穩(wěn)定性，且其禁帶寬度較小,對可見光有較好的效應而成為得到廣泛的應用。（剩余8250字）