基于納米壓印的高分辨率和高效率量子點(diǎn)發(fā)光二極管

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關(guān)鍵詞：量子點(diǎn)發(fā)光二極管（QLED）；納米壓印；高分辨率；電荷阻擋層中圖分類號(hào)：TN312.8 文獻(xiàn)標(biāo)識(shí)碼：ADOI：10.37188/CJL.20250009 CSTR：32170.14.CJL.20250009

Abstract：The current high-resolutionquantum dot light-emiting doides（QLEDs）fabricated by various quantum dots paterning techniques sufer from low eficiency，mainly dueto the passage oflarge leakage currents between pixels.To solvethis issue，ahoneycomb Poly（methyl methacrylate）（PMMA）filmwas fabricated by nanoimprinttechnique and appliedasacharge barierlayer intheQLEDlightemitinglayer.Theresultingred QLEDswitharesolutionof8467 pixel perinch（PPI）were successfullyfabricated.Due tothe good insulating propertiesofPMMA，thechargebarrerlayersuccessfully isolatestheelectron transportlayerandthehole transportlayer.Therefore，theleakagecurentofourdeviceis greatlyreducedcomparedtothedevicewithoutchargebarrerlayerpaterning，andtheexternal quantumeffciency （EQE）is greatly improved，with a maximum EQE of 15. 31% and a maximum brightness of 100274cd/m2 ：

Key Words：quantum dotlight-emitting doides（QLEDs）；nanoimprint;high-resolution;charge barrierlayer

1引言

量子點(diǎn)（Quantumdots，QDs）是一種納米級(jí)別的半導(dǎo)體晶體，具有獨(dú)特的量子限域效應(yīng)，能精準(zhǔn)調(diào)控發(fā)射光的波長和顏色純度，由此帶來了高色域、高亮度、低能耗等優(yōu)勢[1-3]。（剩余15077字）