Er3+摻雜AIScN薄膜發(fā)光及鐵電性能的協(xié)同調(diào)控

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關(guān)鍵詞：AlScN; Er3+ ；光致發(fā)光；強(qiáng)鐵電性

中圖分類號(hào)：0482.31 文獻(xiàn)標(biāo)識(shí)碼：A

DOI：10.37188/CJL.20250023 CSTR：32170.14.CJL.20250023

Abstract：lanthanide ions have abundant luminescent energy levels，with their luminescence intensity and wavelengthaffected bythelatice symmetry.Theregulationofluminescence properties viacontrolablelatice fields can berealizedbyaltering electricfieldsand stressFerroelectric material hasnon-volatile spontaneouspolarization，and itsdirectioncanbereversedorreoriented byelectric fields.Dopinglanthanideionsasluminescencecenters into ferroelectric materialsandutilizing the ferroelectricpolarization field fordynamicregulationoflanthanideions‘lumnescence wavelength and intensitycan significantly improvethe performance of semiconductoroptoelectronic devices. AlScN，with itsdynamicalltunable highremanent polarization，largebandgap，and highcompatibilitywith CMOS processes，ofers new opportunities for constructing novel luminescent devices with multifunctional ferroelectric regulation.This paper investigated the effects of Ers+ doping concentrations on the luminescence and ferroelectric propertiesofAlScNfilms.TheEr'dopingconcentrationrises，andmoreluminescencecentersareincorporated，effectively enhancing the luminescence potential. Notably，a marked increase in luminescence of Er3+ -doped AlScN filmswas achieved at doping concentrations of 3. 6% to 9.4%．However，when the doping concentration exceeded 10% ，a quenching effectledto the decrease ofluminescence，highlighting the importanceof preciselycontrolling the doping limit for optimal performance.Although the increase in Er3+ doping concentration slightly degraded the performance ofAlScN，the remanent polarization remained above 80μC/cm2 at a concentration of 9. 4% ，demonstrating the coexistence of luminescence and robust ferroelectric performance in Er3+ -doped AlScN films.This research fills the gap regardinglanthanideions-dopedAlScNfilms，layingasolidfoundationforthedevelopmentofhighlyintegrated，multifunctionalluminescent devices and potentially catalyzing innovation in the optoelectronic domain.

Keywords：AlScN; Er3+ ;photoluminescence;robust ferroelectricperformance

1引言

稀土離子具有獨(dú)特的電子結(jié)構(gòu)，使得稀土離子發(fā)光材料具有色純度高、光吸收能力強(qiáng)、發(fā)射波長(zhǎng)分布區(qū)域?qū)?、物理和化學(xué)性能穩(wěn)定等優(yōu)點(diǎn)，廣泛應(yīng)用于照明、顯示和顯像等領(lǐng)域[1-5]。（剩余15780字）