Lu2O3 的位錯與濕法刻蝕

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Abstract：Lutetium oxide （ Lu2O3 ） is recognizedasapotential laser crystal material，and it is noted for its high thermalconductivity，lowphonon energy，andstrong crystalfield.Nevertheless，itshighmelting pointof2450Cinduces significanttemperaturegradients，resulting inaproliferationof defects.Thescarcityofcomprehensiveresearchonthis crystal'sdefects hinders theenhancementofcrystalquality.Inthis study，weemployed thechemicaletching method to examine the etching effectson Lu2O3 crystalsunder variousconditionsand to identify theoptimal conditions forinvestigating the dislocation defects of Lu203 crystals（mass fraction 70% H3PO4 ，160 ，15-18 min）.Themorphologies of dislocation etch pits on the（111）-and（110）-oriented Lu2O3 wafers were characterized using microscopy，scanning electron microscopy and atomic force microscopy. This research addresses the gap in understanding Lu 2O3 linedefects and offers guidance for optimizing the crystal growth process and improving crystal quality.

Keywords： Lu2O3 ;etchpit;dislocations;crystal defects CLC number：O482.31 Documentcode：A DOI：10.37188/CJL.20250024 CSTR：32170.14.CJL.20250024

摘要：氧化 （Lu2O3） 被認(rèn)為是一種具有潛力的激光晶體材料，因其高熱導(dǎo)率、低聲子能量和強(qiáng)晶體場而備受矚目。（剩余33643字）