Bi2S3/Bi2O2Se 異質(zhì)結(jié)光電極的制備與機理研究
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中圖分類號：TB332 文獻標志碼：A 文章編號：2095-2945（2025）24-0068-05
Abstract：Nanomateralshavewideaplicationpotentialinoptics，electronicsandotherfieldsduetotheiruniquesizeeffect，ich morphology，andexcelentsinglecrystalproperties.Thispaperstudiesamethodofpreparingalayerofdibismuthselenideoxide L Bi202S? e） nanosheets on the surface of a dibismuth trisulfide（F 312>： ）nanorod arrayto build a dibismuth trisulfide/dibismuth selenide oxide （Bi2S/B 12O Se）heterojunction，and studiestheaplicationof thisheterostructureinthephotoanodeoxygen evolutionreactionStudies haveshownthattesthesidlectrodematerialsaveexcelentsinglecystalpropei，hichcontributestotetrasprtfpot generated carriers. The photocurrent density of the electrode based on the Bi 2S3/ Bi2OSe heterojunction is increased by 7times and 263 times compared to that of the pure Bi2S3 electrode and the pure BizO2Se electrode，respectively. This is due to the formation of a Van der Waals heterojunction of Bi2S3/B 121 OSeat the interface，which greatly improves the solar absorptionefficiency of the electrode material，improvestspatiocfotogeatedtroeiddusteobatioateoftooleis.
Keywords：heterojunction;photoelectric response;two-dimensional material; nanostructure；nanomaterials
近年來，二維層狀納米材料因其具有獨特的物理和化學(xué)性質(zhì)備受研究者的關(guān)注。（剩余5330字）