陡電壓上升率下功率半導(dǎo)體器件封裝用有機硅凝膠擊穿特性研究

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關(guān)鍵詞：有機硅凝膠；陡電壓上升率；擊穿特性；功率器件；封裝絕緣DOI：10. 15938/j. emc.2025.06.007中圖分類號：TM614 文獻標志碼：A 文章編號：1007-449X（2025）06-0063-08

Breakdown characteristics of silicone gel for power semiconductor device packaging under steep voltage rise rate

SU Dazhi， ZENG Fuping， HUANG Meng， ZHONG Hengxin， CHEN Rirong， TANG Ju（School of Electrical Engineering and Automation，Wuhan University，Wuhan 43OO72， China）

Abstract：The existing research shows that the insulation strength of silicone gel for power device packaging is greatly affcted by the voltage rise rate at the edge of pulse voltage. Therefore，the focus is on the breakdown characteristics of silicone gel at a steep voltage rise rate. In this paper，a steep voltage rise rate breakdown experimental platform which was built based on the typical insulation structure of electrical equipment.The steep wave breakdown characteristics of silicone gel under diffrent voltage rise rates under non-uniform electric field were studied，and the breakdown process of silicone gel was discussed. The results show that the field ionization theory can better explain the breakdown process of silicone gel. Thegeneration of cavity defects will lead to theenhancementof colision ionization，which will promote the gradual expansion of the defect area and eventuall breakdown. Under the slightly non-uniform electric field and the extremely non-uniform electric field，the breakdown field strength of the silicone gel decreases with the increase of the voltage rise rate，and the damage effect on the insulating medium also increases.However，due to the modulation of the space charge in the cavity defect，the breakdown field strength gradually stabilizes. There is an obvious“area effect” under a slightly non-uniform electric field， which makes the breakdown field strength of the silicone gel sample under a slightly non-uniform electric field smaller than that under a very non-uniform electric field.The research results can provide theoretical support for improving the packaging reliability of power semiconductor devices such as IGBT.

Keywords：silicone gel;steep rise rate of voltage;breakdown characteristics;power devices;packaging insulation

0引言

功率半導(dǎo)體器件是新能源發(fā)電、直流輸配電、高速鐵路等系統(tǒng)中電能變換的核心元器件之一，以絕緣柵雙極晶體管（insulated gate bipolar transistor，IG-BT）為代表的功率器件被廣泛應(yīng)用于高壓大容量裝備中[1]。（剩余11957字）