AIGaAs插人結(jié)構(gòu)對(duì)InAIGaAs/AIGaAs多量子阱發(fā)光特性的影響

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關(guān)鍵詞：InAlGaAs多量子阱；插入層；金屬有機(jī)化合物化學(xué)氣相沉積（MOCVD）中圖分類號(hào)：0482.31 文獻(xiàn)標(biāo)識(shí)碼：ADOI：10.37188/CJL.20240318 CSTR：32170.14.CJL.20240318

Influence of AlGaAsInsertion Structure on Luminescence Characteristics of InAlGaAs/AlGaAs Multiple Quantum Wells

ZHAO Shucun1，2，WANG Haizhu ，WANG Dengkui ，GAN Lulu ，WANG Zhensheng 1， LYUMinghui1，2，MAXiaohui1，2 （1.StateKeyLaboratoryofHigh Power SemiconductorLasers，Changchun UniversityofScienceandTechnology， Changchun130022，China; 2.Research InstituteofChongqing，Changchun UniversityofScienceand Technology，Chongqing401135，China） *CorrespondingAuthor，E-mail：whz@cust.edu.cn

Abstract：InAlGaAs/AlGaAs multiple quantum wells（MQWs） have attracted increasing attention in the near-infraredand visible light fields due to their wide spectral range，and have become an emerging research hotspot.This study uses metal organic chemical vapordeposition （MOCVD） growth technology to prepare InAlGaAs/AlGaAs multi quantum well materials.Based on the main factors and theoretical calculation methods that need to be considered when selecting the insertion layer（ISL）material，the influenceof the insertionlayer structureon the luminescence properties of quantum wels is explored. We designed and grew InAlGaAs quantum wells without an insertion layer， as wellas InAlGaAsquantum wels withAlGaAs insertion layers ofvarying thicknessesandAlcompositions.The experimentalresults show thattheintroductionof the insertionlayersignificantlyimproves theluminescenceintensityof thequantumwellAlthoughtherearelocalizedstatesinthesampleitself，thepresenceof theinsertionlayerdoesnot introduce morelocalized states，and the presenceof the insertionlayerdoes notchange thecarierrecombination mechanism in quantum wels.The research results provide importanttheoretical analysis and experimental data for the structuraloptimization and insertionlayer technologyof InAlGaAsquantum wels，indicatingthat theoptical performanceof InAlGaAsquantum wellscanbe significantly improved bydesigning theinsertionlayerreasonably.

Key Words： InAlGaAs multi quantum well; insertion layer; metal organic chemical vapor deposition（MOCVD）

1引言

在現(xiàn)代光學(xué)領(lǐng)域，InAIGaAs/AIGaAs多量子阱（MQWs）因其獨(dú)特的電子和光學(xué)特性，成為了研究和應(yīng)用的熱點(diǎn)。（剩余11538字）