基于N-苯基馬來酰亞胺改性的量子點(diǎn)光刻膠制備色轉(zhuǎn)換像素化薄膜

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中圖分類號(hào)：0482.31 文獻(xiàn)標(biāo)識(shí)碼：ADOI：10.37188/CJL.20240317 CSTR：32170.14.CJL.20240317

Quantum Dot Photoresists for Pixelated Color Conversion Films BasedonN-PhenylmaleimideModification

JIANG Borui1，SONG Boxiang'，CHEN Enguo ，LUO Jiajun"， TANG Jiang1 （1.WuhanNationalLaboratoryforOptoelectronics（WNLO），Huazhong UniversityofScienceandTechnology（HUST）， Wuhan430074，China; 2.CollegeofPhysicsand Information Engineering，F(xiàn)uzhou University，F(xiàn)uzhou 35o1o8，China; 3.FujianScience&TechnologyInnovationLaboratoryforOptoelectronicInformationofChina（MinduInnovationLaboratory）， Fuzhou 350108，China） Corresponding Authors，E-mail：ceg@fzu.edu.cnj； luojiajun@hust.edu.cn；tang@mail.hust.edu.cn

Abstract：Photolithographyisareliable methodforfabricating pixelatedcolorconversionfilms in Micro-LEDs，butit faces chalenges related to thecompatibilityofquantumdots（QDs）with photoresists.This paperdevelops aquantum dotcompatible photoresistby modifying acrylicresinwithN-phenylmaleimide（NPMI）sidechains.TheCObondsonthe sidechain groups form coordination bonds with quantum dots，passivating surface defects and improving the dispersion of quantumdots.This enhances the photoluminescence quantum yield（PLQY）of the photoresist solution，reaching 76. 1 % （2 for red and 4 3 . 4 % for green.Even after fabricating the color conversion films，the passivation effect persists，with PLQY values of 6 6 . 4 % forgreenand 36.4% for red.The minimum pixel size achieved was arectangular arrayof 1 0 μm x 1 0 μm .Theresin sidechain modification approach inthis study provides guidance for developing QD-compatible photoresistsand offers asimpleand viable solution for the commercialization offull-color Micro-LEDapplications.

Keywords：quantum dot photoresist；color conversion;resin modification；pixelation

1引言

微型發(fā)光二極管（Micro-LED）作為新興顯示技術(shù)，與液晶顯示屏（LCD）和有機(jī)發(fā)光二極管（OLED）等傳統(tǒng)顯示技術(shù)相比，具有諸多優(yōu)勢：低能耗、高亮度、高壽命、超高分辨率、響應(yīng)速度極快等[6]。（剩余14098字）