稀土摻雜金屬氧化物薄膜晶體管研究進(jìn)展

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關(guān)鍵詞：金屬氧化物薄膜晶體管；稀土元素；遷移率；穩(wěn)定性中圖分類號(hào)：TN321.5；0482.31 文獻(xiàn)標(biāo)識(shí)碼：ADOI：10.37188/CJL.20240268 CSTR：32170.14.CJL.20240268

Research Progresson Rare Earth Doped Metal Oxide ThinFilm Transistors

HUANGXianglan，PENG Junbiao* （StateKeyLaboratoryofLuminescentMaterialsandDevices，outhChinaUniversityofTechnology，Guangzhou564，hina） *Corresponding Author，E-mail：psjbpeng@scut.edu.cn

Abstract：Metaloxidethin filmtransistors（MOTFTs）have greatpotentialforaplicationinlarge-sizedorganic lightemitingdisplaydriverbackplanesduetotheirhighcariermobilityandgoodelectricalstability.Inadition，thefabrication processs ofMOTFTsarecompatible withamorphous siliconthinfilmtransistors’，resulting intheirlowermanufacturingcostsandstrong marketadvantages.However，thetrade-offbetweenmobilityandstabilitywhicharethekeyindicators formeasuring MOTFTslimits their high-endappications.Therefore，developing MOTFTsthatcombinehighmobility with high stability hasbecomearesearch hotspot and industrycompetition focus.Numerous studies indicate thatrareearth （ R E ） doped oxidesemiconductor materials is promising for achieving this goal.This paperfocuses on reviewing the design of R E dopedoxidematerials thatachieveboth high mobilityandhigh stability，as wellasthecharacteristic indicators that MOTFTs have reached，and discusses the changes and development potential of R E doped MOTFTs（ R E -MOTFTs）.

Keywords：metal oxide thin film transistors；rare earth；mobility；stability

1引言

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