氧化鋅微納結構紫外發(fā)光與激光器件研究進展

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中圖分類號：0482.31 文獻標識碼：ADOI：10.37188/CJL.20240250 CSTR：32170.14.CJL.20240250

RecentDevelopmentsofLight-emittingandLaserDevicesBasedon ZincOxide Micro-/Nanostructures

LIU Maosheng，WANG Jinhui，KAN Caixia，SHI Daning*，JIANG Mingming* （ColegeofPhysics，MIKeyLaboratoryoferospaceInformationaterialsndPysics，KeyLaboratoryforntelligent Nano MaterialsandDevices，Nanjing UniversityofAeronauticsandAstronautics，Nanjing211O6，China） CorrespondingAuthors，E-mail：shi@nuaa.edu.cn；mmjiang@nuaa.edu.cn

Abstract：Due to the wide direct bandgap（3.37eV），large exciton binding energy（60 meV）and excellent optical gain characteristics，zinc oxide（ZnO） becomes an idealmaterial forlow-dimensionaland eficient ultraviolet light-emitting and laser devices.Recently，lasing actions have been widely observed in various ZnO microcavitiesunderoptical excitation，butthe developmentofelectricallypumped devices is thekey totheir practical application.This review starts withabrief overview of the basic properties of ZnOand common fabrication methodsfor itsmicro-/nanostructures，then therecent progresses of light-emitting and laserdevices based on ZnO micro-/nanostructures were discussed according to different device architectures.Initially，this review focuses on the progresses of light-emitingand laser devicesbased on low-dimensional ZnO heterostructures and Schottky structures，alongside the methodologies for the performance optimization.Subsequently，itdelves into thecurrent landscape of research pertaining to p-type ZnO materialsand their homostructural counterparts in light-emitting and laserapplications.Finall，the remaining issues and future development directions of ZnObased devices have been summarized.

1引言

氧化鋅（Zincoxide，ZnO）作為一種具有較寬的直接帶隙（3.37eV）和大的激子束縛能（60meV）的寬禁帶半導體，在紫外（Ultraviolet，UV）光源和激光器等光電器件的設計與構筑方面受到了廣泛關注[1-3]。（剩余52218字）